Standard Operating Procedure for On-Chip Porous Silicon Surface Functionalization

Abstract

A standard operating procedure for a Schlenk line, degassing solvents by the freeze-pump-thaw method, and porous silicon (pSi) functionalization is detailed. On-chip pSi devices were prepared by anodic etching in 3:1 hydrofluoric acid: ethanol (v/v) solution and subsequently functionalized with 1-octene by thermal hydrosilylation. The chips demonstrated good protection from ambient air moisture.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2022
Accession Number
AD1179153

Entities

People

  • Nathan A. Banek
  • Wayne A. Churaman

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Spectra
  • Abstracts
  • Acids
  • Alcohols
  • Alkenes
  • Availability
  • Chemical Compounds
  • Chemistry
  • Classification
  • Contracts
  • Controlled Atmospheres
  • Electromagnetic Spectra
  • Hydrofluoric Acid
  • Laboratory Equipment
  • Materials
  • Materials Science
  • Military Research
  • Moisture
  • Monitoring
  • Pumps
  • Security
  • Spectra
  • Standards
  • Vacuum Pumps

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