Sub-Millisecond Pulse Power Evaluation of High-Voltage Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and High-Voltage SiC Insulated Gate Bipolar Transistor (IGBT)

Abstract

This work presents the pulse evaluation and characterization of a 10-kV silicon carbide (SiC) metal-oxide-semiconductor field effect transistor (MOSFET) and 27-kV SiC insulated gate bipolar transistor (IGBT). These devices are ideal for high-voltage, fast-switching, and high-power density electronic applications due to their superior material properties compared with their silicon counterpart. The static and transient performance of these devices were investigated and reported. The goal of the evaluation is to assess the sub-millisecond pulse current handling capabilities of these power devices.

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Document Details

Document Type
Technical Report
Publication Date
Sep 26, 2022
Accession Number
AD1181629

Entities

People

  • Aderinto Ogunniyi
  • Heather Obrien
  • Miguel Hinojosa

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Ceramic Materials
  • Compound Semiconductors
  • Electronics
  • Electronics Laboratories
  • Energy Systems
  • Field Effect Transistors
  • High Voltage
  • Materials
  • Materials Science
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Peak Power
  • Power Electronics
  • Pulsed Power
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Test And Evaluation
  • Transistors

Fields of Study

  • Engineering
  • Materials science

Readers

  • Electrical Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics