Fundamental studies of InAlN/GaN HEMTs on Si substrate
Abstract
The next-generation of communication systems, including 5G and beyond, vehicles and internet of things needs components operating at mm-Wave bands with low cost and high-efficiency. For such communication system, high efficiency and high bandwidth power amplifiers are the key elements. However, the current commercially available power amplifiers using Si and GaAs technologies can not meet such requirements due to their lack of high power and high frequency capabilities. Instead, GaN high electron mobility transistor (HEMT) technology is one of the potential candidates, resulting from the high electron mobility and wide bandgap features. Two dominant GaN technologies are GaN-on-Si HEMTs and GaN-on-SiC HEMTs. Compared to their GaN-on-SiC counterpart, GaN-on-Si HEMTs feature advantages of low cost, large-scale capability and are thus compatible with large wafer diameter CMOS foundries. However, to-date, GaN-on-silicon HEMTs DC and RF performances still need to be drastically improved.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 21, 2022
- Accession Number
- AD1190049
Entities
People
- Yuping Zeng
Organizations
- University of Delaware