Novel Deeply Scaled Fin Heterojunction Bipolar Transistors (FinHBTs) For THz Mixed Signals Applications

Abstract

A novel lateral SiGe FinHBT has been proposed. Utilizing the advanced lithography technology of ultra-scaled VLSI, the lateral scaling of base width can greatly enhance the RF performance of FinHBT. A FinFET compatible fabrication process has been designed and developed. With a 100nm base width and 15% peak Ge composition, the maximum measured DC gain is 6.5. The simulation predicts that the fT/fMAX > 750GHz can be achieved with base width scaling.

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Document Details

Document Type
Technical Report
Publication Date
Feb 17, 2023
Accession Number
AD1193475

Entities

People

  • Mau-chung F Chang
  • Xicheng Duan

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Air Force Research Laboratories
  • Base Pressure
  • Bipolar Junction Transistors
  • Chemical Vapor Deposition
  • Electron Beam Lithography
  • Electronics Laboratories
  • Epitaxial Growth
  • Fabrication
  • Field Effect Transistors
  • Governments
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Lithography
  • Materials
  • Measurement
  • Modules (Electronics)
  • Semiconductors
  • Transistors
  • Very Large Scale Integration

Readers

  • Integrated Circuit Design and Technology.
  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology