Study of N Incorporation in InSb on GaAs by Molecular Beam Epitaxy for Long Wavelength
Abstract
The distinguishing features of dilute nitride III-V semiconductors lie in the large simultaneous reduction in the bandgap and lattice parameter when N is incorporated in small amounts in an otherwise wide band gap III-V material. In particular, N incorporation in InSb is attracting great attention due to its potential applications in the long wavelength infrared (LWIR) applications. However, the relatively small atomic size of N with respect to Sb makes the growth of good quality InSbN layers challenging with effective N incorporation. In this dissertation we present a correlation of the molecular beam epitaxial growth parameters on the type of N-bonding in the InSbN epilayers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 20, 2013
- Accession Number
- AD1194384
Entities
People
- Nimai Patra
- Shanthi Iyer
Organizations
- North Carolina Agricultural and Technical State University