Silica Based Inorganic Composite for Heterogenous Integration
Abstract
Currently, there is strong demand across government and commercial sectors for high densification of microelectronic systems. Wafer level packaging and heterogenous integration strategies provide a potential solution for tighter integration and higher densification of electronics. However, conventional packaging materials are limiting the ability of these techniques to address the advanced needs of microelectronics fabrication. These limitations predominately stem from the organic-based chemistries that traditional packaging materials are composed of. These organic-based packaging materials have high coefficients of thermal expansion, complex deposition processes, and have low compatibility with further microfabrication steps. Due to the organic nature of these materials, they also outgas, have low thermal stability, and poor mechanical stability. In this work, we describe a new inorganic based silicate composite material that can be deposited in thick layers (10-20 micro-m) through air spray, casting, and spin coating. This material is synthesized with clean room grade starting materials ensuring insertion into existing microfabrication process flows. After cure, this material has thermo-mechanical, chemical and RF properties comparable to a quartz silica. Broadly, we find that this material will be of significant use for high density CMOS compatible systems, and also specifically high-density phased arrays.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 20, 2023
- Accession Number
- AD1197901
Entities
People
- Al Cabral
- Bradley Duncan
- Connor Belanger
- Devon Beck
- Melissa Smith
- Ricci Ricci
- Ryan Benz
Organizations
- Massachusetts Institute of Technology