Final Report: Quantum Dot Lasers with Asymmetric Barrier Layers: A Novel Type of Semiconductor Lasers

Abstract

The objective of this project was to explore the potential of a novel type of semiconductor lasers quantum dot (QD) lasers with asymmetric barrier layers (ABLs) for low-threshold, temperature-stable, high-power, and high-speed operation. To accomplish this goal, a comprehensive theory of static (threshold and power) and dynamic characteristics of ABL QD lasers has been developed and recommendations have been provided for the development of ABL QD lasers that will significantly outperform conventional QD lasers.

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Document Details

Document Type
Technical Report
Publication Date
Sep 20, 2021
Accession Number
AD1204498

Entities

People

  • Levon V Asryan

Organizations

  • Virginia Tech

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Communication Systems
  • Electronics Laboratories
  • Energy Bands
  • Laser Beams
  • Laser Diodes
  • Laser Science
  • Materials Science
  • Modules (Electronics)
  • Optical Properties
  • Optoelectronics
  • Power Electronics
  • Quantum Dot Lasers
  • Quantum Dots
  • Quantum Efficiency
  • Quantum Electronics
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductors
  • Three Dimensional
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Missile Defense Systems.
  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing