Radiation Effects on MOSFET Semiconductor Devices in Support of Leo Operations

Abstract

In this research, we exposed the Infineon BSC060N10NS3GATMA1 power metal oxide semiconductor field-effect transistor (MOSFET) to x-ray radiation and tested the device to failure by monitoring its voltage threshold. We found the MOSFET failed at approximately 7 krads under biased conditions versus 24 krads when held at ground (to simulate spare parts). Applying 2 mm of aluminum shielding to the MOSFET increased the survivability by roughly a factor of three. Based on the results from the radiation testing, we used the SPace ENVironment Information System (SPENVIS) to identify 5-year low Earth orbit (LEO) satellite orbits that would support the devices radiation tolerance.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2023
Accession Number
AD1213590

Entities

People

  • Brandon A. Norman

Organizations

  • Naval Postgraduate School

Tags

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Charge Carriers
  • Cosmic Rays
  • Earth Orbits
  • Electronics Industry
  • Electronics Laboratories
  • Field Effect Transistors
  • Galactic Cosmic Rays
  • Gamma Rays
  • Geometry
  • Low Earth Orbits
  • Metal Oxide Semiconductors
  • Mosfet Semiconductors
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • Spacecraft

Readers

  • Agricultural Chemistry/Soil Science
  • Semiconductor Device Technology
  • Space Exploration and Orbital Mechanics.

Technology Areas

  • Microelectronics
  • Space
  • Space - Satellites