Interfacial Misfit Dislocation Array based Metamorphic Antimonide Buffers for LWIR Detectors
Abstract
Major Goals: The following are the major goals of the proposal: 1) Goal 1: development of ternary antimonide buffers with ~ 6.3 A lattice constant through novel interfacial misfit dislocation arrays. This would involve growth of InGaAs on InP and then subsequent growth of an InGaSb IMF layer. This goal will also involve significant characterization of the materials growth using TEM and XRD to determine residual threading dislocation density. 2) Goal 2: investigation of atomic structure of IMF lower dislocations using transmission electron microscopy. 2) Goal 3: development of the IMF based buffers on Silicon substrates. This will involve both the suppression of antiphase domains and the reduction of threading dislocations. Demonstration of devices based on this approach. Accomplishments: Key accomplishments: 1) first demonstration of IMF array formation in InSb on InAs and InGaSb on InP. 2) Most significant and complete analysis of IMF arrays using TEM analysis. 3) Demonstration of an ICLED on Silicon in collaboration with NRL.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 10, 2023
- Accession Number
- AD1223182
Entities
People
- Ganesh Balakrishnan
Organizations
- University of New Mexico