Study of Field Assisted Photocathodes with Double Heterojunction Structure

Abstract

The Ge/ZnSe/GaAs structure studied is potentially capable of giving emission efficiency for 1-1.7 micrometer infrared radiation. Growth of ZnSe on Ge by the HCl close space transport process was investigated. These junctions showed switching characteristics associated with traps. The trapping actions prevented electrons photoinduced in the Ge from crossing into the ZnSe with high transfer efficiency. Fabrication, surface properties, quantum efficiency and Auger spectroscopy of the ZnSe/Ge diodes are studied.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1974
Accession Number
ADA005020

Entities

People

  • A. G. Milnes
  • D. L. Feucht
  • P. K. Govil

Organizations

  • Carnegie Mellon University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Chemistry
  • Compound Semiconductors
  • Conduction Bands
  • Electronics Industry
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Measurement
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Plastic Explosives
  • Quantum Yields
  • Semiconductor Devices
  • Semiconductor Junctions
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Space