Some Mathematical Considerations Regarding the Calculation of Permanent Damage of Devices Due to EMP Pulses

Abstract

A mathematical analysis of the failure of semiconductor junctions due to EMP induced pulses is presented. Included in this discussion are: the effects of finite-size p-n junctions on maximum temperature buildup; an evaluation of interpulse cooling; and a determination of the response of these devices to damped periodic waveforms. Limitations of the results are presented. Such information will be generally useful for performing preliminary damage assessment and/or screening of devices.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1976
Accession Number
ADA027534

Entities

People

  • Ira Kohlberg

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Damage Assessment
  • Determinants (Mathematics)
  • Equations
  • Government Procurement
  • Governments
  • Infinite Series
  • Mathematical Analysis
  • P-N Junction Diodes
  • P-N Junctions
  • Security
  • Semiconductor Devices
  • Semiconductor Junctions
  • Semiconductors
  • Spatial Distribution
  • Square Waves
  • Waveforms
  • Waves

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Electrical Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics