Investigation of Technological Problems in GaAs
Abstract
Significant progress in areas of GaAs technology with impact on the development of microwave FET devices is reported. In growth and evaluation of semi-insulating substrate material, improvements in the crystalline quality of the material by elimination of backfill inert gases in the growth system leading to better yield and progress in the characterization of semi-insulating GaAs by the interpretation of transport measurements in terms of models for the electrical compensation are reported. In liquid phase epitaxial growth high reproducibility and uniformity of ultra-thin (0.5 micrometer) FET layers was demonstrated; resistivity of 40,000 ohms-cm was achieved in Cr-doped buffer layers by sensitive control of the bakeout temperature of the melt. Remarkable progress was made in ion implantation by demonstrating high reproducibility and uniformity of S implanted layers, and by achieving high doping efficiency in low and high dose Se implantation. FET devices made from Se implanted GaAs show negligible post-tuning drift characteristics in device noise figure compared to transistors made of LPE material. In the area of interest of IMPATT diodes, a strong dependence of the ionization rates on doping density was observed.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1976
- Accession Number
- ADA030599
Entities
People
- Anthony A. Immorlica
- Burt W. Ludington
- Fred H. Eisen
- John A. Higgins
- Reidar L. Kuvas