Investigation of InGaAs FETs.

Abstract

Application of the theory of Statz et al. to the noise behavior of early InGaAs FETs shows that this is due to flow of channel current in the substrate/InGaAs grading layer, where the saturated electron velocity is degraded. If this defect is eliminated, the model shows a return to GaAs-like behavior, but with significantly better noise figure than GaAs, despite possible increase in electron temperature. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1977
Accession Number
ADA038821

Entities

People

  • R. L. Bell
  • S. G. Bandy

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Circuits
  • Computers
  • Contracts
  • Diffusion Coefficient
  • Digital Computers
  • Electronics
  • Electrons
  • Energy Bands
  • Equivalent Circuits
  • Experimental Data
  • Field Effect Transistors
  • Geometry
  • Layers
  • Low Noise
  • Materials
  • Military Research
  • Thickness

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics