New Passivation Methods of GaAs.

Abstract

The investigation of the anodic growth processes of semiconductor oxides has resulted in improved oxides, superior interface conditions between semiconductor and oxide, and long-term charge storage devices. MOSFETs in the three modes of inversion, depletion and accumulation were fabricated and useful electronic characteristics were obtained. The study of an optimization of the electrolyte and other aspects were continued. Further results on the oxidation of InP are presented. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1977
Accession Number
ADA040042

Entities

People

  • A. Colquhoun
  • A. F. A. B. El-safti
  • B. Bayraktaroglu
  • H. L. Hartnagel
  • S. J. Hannah

Organizations

  • Newcastle University

Tags

DTIC Thesaurus Topics

  • Chemistry
  • Conduction Bands
  • Crystal Structure
  • Energy Bands
  • Engineering
  • Field Effect Transistors
  • High Temperature
  • Materials
  • Measurement
  • Metal Oxides
  • Metal-Semiconductor Junctions
  • Oxidation
  • Oxide Films
  • Oxides
  • Semiconductors
  • Standards
  • Thickness

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics