New Memory Device Structures.
Abstract
Buried channel, double-level anodized aluminum CCD's with ordinary oxide processing have been found to withstand total doses of ionizing radiation of at least 3 x 10 to the 6th rad (Si) without significant changes in CTE or full well capacity and with only moderate increases in dark leakage current. This exceeds the program goals for total dose hardness by a factor of three. However, surface channel CCD's were found to have greatly degraded CTE at dose levels of 0.8 x 10 to the 5th rad (Si). HCl gettered oxides had significantly worse flatband voltage shifts than either steam or dry oxides, both of which showed about the same shifts. The tests of chrome doping of the oxide were inconclusive due to its inadvertent combination with HCl gettering. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1974
- Accession Number
- ADA042048
Entities
People
- Glenn A. Hartsell
Organizations
- Texas Instruments