X-Band Solid-State Module for Airborne Array Radar Applications.
Abstract
This report describes the progress during the first six months of an 18-months' research program to develop amplifier modules suitable for airborne, active array radar applications. Using GaAs FETs as the active device, the design goal of these amplifier modules is an output power of 5 W with 25-dB gain over the 9- to 10-GHz frequency band. Extensive characterization of the amplifiers during pulsed operation is also part of this program. It is projected that the amplifier module will be configured as a cascade of five balanced stages. To achieve high overall amplifier efficiency, the output power of the FETs will be tailored to each of the amplifier stages. New device types have been developed to the point of achieving greater than 1-W output. In particular, the 16-gate (16G) FET has achieved 1.03 W at 8 GHz, the 32G FET achieved 1.82 W at 8 GHz, and the 48G FET achieved 3.2 W at 4 GHz. Material parameters and processing techniques are being improved to give even better performance. Amplifier stages have been fabricated using 2G, 4G single-cell, and 4G two-cell devices. When used as balanced pairs, more than 500 mW have been generated over the 9- to 10-GHz band. The development of higher power stages and the efficient packaging of a multistage amplifier will be major goals for the next six-months' period. Phase sensitivity and phase transient measurements on the low-level stages indicate that FET amplifiers are good candidates for phase array applications. Phase measurements on a cascade of amplifiers will be done during the next six months.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1977
- Accession Number
- ADA042804
Entities
People
- H. C. Huang
- R. L. Ernst
Organizations
- RCA Corporation