Optical-Microwave Interactions in Semiconductor Devices.
Abstract
The design and fabrication of a GaAs FET microwave oscillator was described. The optical injection locking property of this oscillator was studied. It was also found that the frequency jitter of the oscillator output could be reduced through optical illumination. A novel scheme of microwave mixing in a GaAs FET amplifier was demonstrated, where the local oscillator signal was introduced through optical injection. A new approach of obtaining optical injection locking of oscillators was developed where a FET amplifier was connected to the oscillator to be locked and the modulated laser beam was used to illuminate the amplifier instead of the oscillator directly. The merits and disadvantages of this technique was discussed. The direct amplitude modulation speed of a single mode GaA1As injection laser was found to be at least 6 GHz. The output power versus input current characteristics of the same laser was determined to be better than -40 dB in second harmonic distortion. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1978
- Accession Number
- ADA049322
Entities
People
- Huan-wun Yen
- Michael K. Barnoski
Organizations
- HRL Laboratories