Monolithic 20W 2GHz Transistor and Monolithic 5W 4GHz Transistor.
Abstract
Wire bonding experiments on existing microwave dice were performed to determine optimum bonding configurations for microwave transistors. The results of these experiments guided the design of the active portion of the monolithic 2 GHz device, the L-10. To define a 4GHz material specification, several lots of 4 GHz dice are being processed. The results of experiments on epitaxial resistivity and profile will guide the specification of PIN epitaxial material for the 4 GHz portion of the program. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1977
- Accession Number
- ADA049630
Entities
People
- George Schreyer