Time-Domain Two-Dimensional Computer Simulation of Three-Terminal Semiconductor Devices.

Abstract

Special schemes for treating device geometry permit the use of the very fast Fourier analysis technique for solving the two dimensional Poisson's equation so that the dynamics of three terminal semiconductor devices can be computer simulated economically. FET's and bipolar devices have been successfully simulated. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1977
Accession Number
ADA054287

Entities

People

  • S. P. Yu
  • W. Tantraporn

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Boltzmann Equation
  • Boundaries
  • Computer Programs
  • Computer Simulations
  • Computers
  • Electric Fields
  • Electron Density
  • Electrons
  • Energy Bands
  • Equations
  • Field Effect Transistors
  • Geometry
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Two Dimensional

Readers

  • Electrical Engineering
  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)

Technology Areas

  • Microelectronics