Electrooptical Devices.
Abstract
Considerable progress has been made toward the achievement of the current objectives of the electrooptical device program. These goals are: (1) to perform life tests on GaInAsP/InP double-heterostructure (DH) diode lasers operating in the 1.0- to 1.3 micron wavelength region and analyze the degradation mechanisms, and (2) to fabricate and study avalanche photodiodes of similar composition GaInAsP operating in the same wavelength region. Life tests of CW, room-temperature GaInAsP/InP DH lasers have continued with a total of 13 devices examined in some detail. Eleven of the lasers have operated for over 2000 hours, with the longest-lived operating 7700 hours before failure. End-face contamination problems have apparently been reduced and other mechanisms for degradation, both of external and internal nature, are under study. CW operation of the DH GaInAsP/InP lasers has been demonstrated at temperatures up to 50 C. The pulsed threshold was found to increase with temperature as Jth = jo exp (T/To) with to approx 75 C and Jo a constant. Over the temperature range 10 C < T < 50 C, the temperature dependence of the wavelength was approximately linear with delta Lambda/delta T approx 3.2 A/C. The pulse response and modulation characteristics of GaInAsP/InP lasers have also been investigated. Clean output pulses with restimates of less than 250 psec, pulse modulation at 200 megapulses/sec, and pulse-position modulation at a 100-Mbit/sec rate have been achieved. Modulation rates in the GHz range should be attainable.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1977
- Accession Number
- ADA054477
Entities
People
- Arthur G. Foyt Jr.
- Ivars Melngailis
Organizations
- Massachusetts Institute of Technology