Encapsulation and Annealing of Sulfur and Selenium Implanted Gallium Arsenide

Abstract

This report describes progress on a program to investigate encapsulation films used as annealing caps on ion implanted GaAs samples and to develop alternative procedures and techniques for improving the efficiency of n- type ion implants. The major (high impact) technological achievement of this research program has been the development and perfection of a chemically inert double layered encapsulation system which improves the electrical performance of ion implanted layers as well as allowing reliable annealing at temperatures up to 1100 C.

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Document Details

Document Type
Technical Report
Publication Date
Mar 24, 1978
Accession Number
ADA056862

Entities

People

  • A. Lidow
  • E. Ammar
  • J. F. Gibbons
  • Jing Peng
  • T. J. Magee

Organizations

  • SRI International

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemical Analysis
  • Chemical Synthesis
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Electrical Measurement
  • Electron Microscopy
  • Electronics Laboratories
  • Field Effect Transistors
  • Mass Spectrometry
  • Microscopy
  • Refractive Index
  • Semiconductors
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Nanocomposite Materials Science

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene