Injection Limited Gunn Devices.

Abstract

Thin, highly pure epitaxial layers of gallium arsenide were grown without conversion layer on semi-insulating substrates. Ohmic contacts to these epitaxial layers were studied and optimized. Both approaches were found prerequisite for reliable operation of injection limited Gunn devices. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1978
Accession Number
ADA056916

Entities

People

  • H. Thim
  • H. Wittmann
  • K. Luebke
  • U. Traxlmayr

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Conversion
  • Electrical Measurement
  • Electronics
  • Epitaxial Growth
  • Field Effect Transistors
  • Flow
  • Gallium Arsenides
  • Isothermal Processes
  • Low Temperature
  • Materials
  • Melting Point
  • Metal-Semiconductor Junctions
  • Physical Chemistry
  • Resistance
  • Solid State Electronics
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics