Electronic Materials Technology (Semiconductors).

Abstract

High purity GaAs has been compounded in pyrolytic boron nitride (PBN) ware. Semi-insulating GaAs single crystals have been grown by the liquid encapsulation technique. High purity InP has been compounded in PBN boats and single crystals of InP have been grown by the high pressure liquid encapsulation technique. Liquid phase epitaxial layers of GaAs have been grown on a semi-insulating substrate that has been etched with an in-situ gallium etch prior to growth. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1978
Accession Number
ADA060363

Entities

People

  • Edward M. Swiggard
  • Howard Lessoff

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Electrical Properties
  • Electron Microscopes
  • Electron Microscopy
  • Electronic Materials
  • Epitaxial Growth
  • Field Effect Transistors
  • Gallium Arsenides
  • Ion Implantation
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Measurement
  • Microscopy
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Nanofabrication and Microfabrication.
  • Polymer Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene