Monolithic Microwave Preamplifier.

Abstract

A computer model of the FET has been developed based on the Pucel model, but with several improvements incorporated. The model has been exercised to produce FET designs, which will be optimized for low noise amplifier performance. The model also predicts device sensitivity to the processing variables, and provides S parameters as a function of frequency and bias. The model has been used to design devices for a low noise monolithic X-band preamplifier. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1978
Accession Number
ADA061728

Entities

People

  • A. Benavides
  • D. Claxton
  • R. Kaelberer

Tags

Communities of Interest

  • Advanced Electronics
  • C4I
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Amplifiers
  • Computers
  • Electric Fields
  • Electrical Engineering
  • Equivalent Circuits
  • Field Effect Transistors
  • Frequency
  • Generators
  • Low Noise
  • Low Noise Amplifiers
  • Military Research
  • Noise
  • Physical Properties
  • Preamplifiers
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Electronics Engineering