Characterization and Analysis of Indium-Doped Silicon Extrinsic Detector Material

Abstract

This second six-month report of a two-year program describes progress made in analyzing Si:In detector material. Hall-effect, photoluminescence, and IRFET measurements were performed to characterize the X level and to attempt to determine its nature.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1978
Accession Number
ADA062578

Entities

People

  • James Baukus
  • L. Forbes
  • Robert Baron
  • T. Mcgill

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Sensors
  • Weapons Technologies

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Calibration
  • Coefficients
  • Contracts
  • Crystal Growth
  • Crystals
  • Detectors
  • Electronics
  • Electronics Laboratories
  • Energy Levels
  • Hall Effect
  • Infrared Detectors
  • Materials
  • Measurement
  • Military Research
  • Resistance
  • Transitions

Fields of Study

  • Materials science
  • Physics

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.