Monolithic 20W 2GHz Transistor and 5W 4GHz Transistor.

Abstract

Two metallization processes were developed for metallization of the deep V-grooves used as vias. These processes are being implemented on several lots of L-10 devices. A shipment of engineering samples of Type A and Type B devices was made to ERADCOM during this quarter. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1978
Accession Number
ADA064624

Entities

People

  • George Schreyer

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Ceramic Materials
  • Electronic Components
  • Electronics
  • Electronics Industry
  • Electronics Laboratories
  • Engineering
  • Geometry
  • Governments
  • Manufacturing
  • Materials
  • Materials Laboratories
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Semiconductors
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Nanofabrication and Microfabrication.