Reliability Study of High Efficiency GaAs IMPATT Devices.

Abstract

The reliability of low-high-low profile gallium arsenide IMPATT diodes has been studied. The devices were fabricated from vapor phase grown epitaxial gallium arsenide using sputtered platinum Schottky junctions and plated heat sink contruction. Various screening methods have been evaluated for use in burn-in, and 75 deg. C case DC burn-in at rated power dissipation selected as the best compromise. Long-term operation tests have established a minimum MTBF at 90% confidence of 41,000 hours. RF storage step stress tests have revealed a potential failure mechanism involving separation of the metallization layers. An improved metallization system has been established eliminating this mechanism. Various additional tests have demonstrated the immunity of these IMPATTs to damage from on-off switching transients, load mismatch and bias voltage transients. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1979
Accession Number
ADA067223

Entities

People

  • John L. Heaton

Organizations

  • M/A-COM Technology Solutions

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Boundaries
  • Crystal Structure
  • Current Regulators
  • Detectors
  • Electrical Circuits
  • Electronic Equipment
  • Fabrication
  • Failure Mode And Effect Analysis
  • Grain Boundaries
  • High Temperature
  • Integrated Circuits
  • Measurement
  • Power
  • Power Supplies
  • Semiconductors
  • Test And Evaluation
  • Thermal Resistance

Readers

  • Electronics Engineering
  • Inertial Navigation Systems.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics