Dielectric-Semiconductor Interfaces of Gallium Arsenide and Indium Phosphide.

Abstract

Capacitance-voltage measurements over a wide frequency range and surface photovoltage measurements were made on GaAs and InP MIS diodes. In GaAs, the surface potential could only be varied about 0.4 eV about a point 0.8-0.9 eV below the conduction band. In contrast, InP displayed a considerably smaller surface state density and the p-type material could be inverted. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1979
Accession Number
ADA068218

Entities

People

  • Larry G. Meiners

Organizations

  • Colorado State University

Tags

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Charge Carriers
  • Chemistry
  • Conduction Bands
  • Crystal Lattices
  • Dielectrics
  • Electromagnetic Fields
  • Electronics Laboratories
  • Energy Bands
  • Fermi Levels
  • Field Effect Transistors
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Semiconductors
  • Surface Properties

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics