IC Fabrication Using Electron-Beam Technology.
Abstract
A significant number (117) of 256-bit bipolar RAMs have been fabricated utilizing all e-beam direct slice writing and plasma etching. These devices pass all dc and ac electrical specifications including operating speed. A previous lot had device characteristics that were slower than specification due to an improper oxide thickness. One slice yielded 40% at dc probe compared to a high of 26% on one slice for a parallel photoresist lot. However, the lot yield for the e-beam slices was only 74% compared to 17% for the parallel photoresist lot. The reduced e-beam yield was attributed to an operator error during plasma etching of the contact O.R. and was not due to e-beam direct slice writing. Another lot of material is in progress (at metal) with tighter plasma etching control to complete the device quantity (500) required for completion of the contract. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1979
- Accession Number
- ADA068656
Entities
People
- Gilbert L. Varnell
- Jack Reynolds
- Shang-yi Chiang
Organizations
- Texas Instruments