Electrooptical Devices.

Abstract

The current objectives of the electrooptical device program are: to perform life tests on GaInAsP/InP double-heterostructure (DH) diode lasers operating in the 1.0- to 1.3-micrometers-wavelength region and analyze the degradation mechanisms, and to fabricate and study avalanche photodiodes of similar composition GaInAsP operating in the same wavelength region. Threshold current densities in DH GaInAsP/InP stripe geometry lasers have been reduced to 2 to 3 KA/sq cm, which, together with new mounting procedures designed to reduce thermal resistance, have resulted in improved performance at elevated temperatures. Considerably lengthened lifetimes and meaningful accelerated aging studies at temperatures as high as 70 C should now be possible. Improved p-n junction diodes have been formed by Be-implantation in n-type InP and GaInAsP. Subnanoampere leakage currents and abrupt voltage breakdowns were observed for both mesa and planar InP diodes. Scanning photoresponse measurements of the GaInAsP (E sub g approx. = 1.0 eV) mesa diodes showed uniform avalanche gains of 2 to 3 times.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1978
Accession Number
ADA069091

Entities

People

  • Charles E. Hurwitz

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Avalanche Photodiodes
  • Conduction Bands
  • Current Density
  • Detectors
  • Electrons
  • Energy
  • Energy Bands
  • Energy Gaps
  • Geometry
  • Life Tests
  • Magnetic Fields
  • Measurement
  • Mesa Diodes
  • P-N Junction Diodes
  • P-N Junctions
  • Thermal Resistance
  • Three Dimensional

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy