Degradation Analysis of CCD/CID Devices.
Abstract
The growing use of Charge-Coupled Devices (CCD's) in systems for analog signal processing has generated a need to develop information on degradation mechanisms that affect CCD devices due to their structure and operation. An experimental study of factors which influence the degradation of parameters and performance of analog charge coupled devices using accelerated stress techniques is reported. Measured parameters included charge transfer efficiency, dark current density, full well capacity, dynamic range, and insertion loss. Test cells of a surface channel device and a buried channel device were temperature bias stressed for 1000 hours with parametric measurements taken at 0, 168, 500 and 1000 hours. Dynamic and d.c. stresses were applied to separate test cells at 125 C and 200 C. Electrical parameters of the devices were measured at room temperature with the precaution taken to cool the devices to room temperature before electrical stress was removed. The test results indicated that a basic trend towards increased dark current and decreased charge transfer efficiency in the p-surface channel CCD's can be attributed to an increase in interface state density. Also, dynamic stressing of the surface channel devices tends to degrade parameters faster than d.c. stressing.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1979
- Accession Number
- ADA069167
Entities
People
- Gerald M. Borsuk
- John W. Dzimianski