Electrical Compensation in InP Produced by Background Impurities and Structural Defects.
Abstract
Liquid phase epitaxial layers of InP have been grown at 475 degrees C by a steady-state growth technique that maintains the substrate at a constant temperature. The growth system has excellent temperature control, fast thermal response, uniform temperature profiles and up to 50 degrees of C/cm temperature gradients can be induced normal to the substrate. To achieve uniform nucleation on InP substrates at these low temperatures a submersed-displacement cleaning procedure was developed that uses a dilute HCl-methanol etch to remove oxides. The initial layers were discontinuous and had poor electrical properties due to oxide contamination in the In-melt and to substrate oxidation during the heat-up cycle. New in and the covering of the substrate with InP during heat-up appears to have solved this problem. Thermodynamic models of the growth system indicate that the graphite growth cell increases the decomposition of fused quartz and introduces C, O and Si into the In-melt. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1979
- Accession Number
- ADA074178
Entities
People
- B. L. Mattes
Organizations
- University of Michigan