Study of the Electronic Surface State of III-V Compounds
Abstract
In the past few years, we have made intensive studies of the physics of compound semiconductor interfaces. This report contains the most important results obtained during the contact period and is divided roughly into three parts dealing with Schottky-barrier formation, oxygen chemisorption, and cesium and cesium oxide overlayers. Following the Overview, Chapter 2 presents a model for the surface structure of GaAs which in now accepted. The next chapter demonstrates that Schottky-barrier pinning is due not to intrinsic surface states but to metal induced extrinsic states. Chapter 4 describes synchrotron radiation studies of Au Schottky-barrier formaton on the IV-V semiconductors and presents a model of Schottky-barrier pinning based on defect formation induced by the Au overlayer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 15, 1978
- Accession Number
- ADA076304
Entities
People
- William E. Spicer
Organizations
- Stanford University