Research on InGaAs FET's.

Abstract

Virtually the whole effort for this period was spent in trying to grow by Vapor Phase Epitaxy (VPE) dislocation-free InGaAs on GaAs at In percentages above 25%. Of all the techniques tried, significant improvement came only after installation of a H2 bypass on the reactor. Field Effect Transistors (FETs) fabricated on the best of the pre-H2 bypass wafers showed sub-GaAs values for the effective saturated velocity, and FETs have yet to be fabricated on the wafers grown with the H2 bypass. Efforts at ion-implanting the pre-H2 bypass wafers were not successful, presumably because of the heavy amount of dislocations in the material. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1979
Accession Number
ADA078816

Entities

People

  • C. Nishimoto
  • R. Fulks
  • S. Bandy
  • Salman M. Hyder
  • T. Boyle

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Conduction Bands
  • Electrical Properties
  • Electron Beams
  • Electrons
  • Energy Bands
  • Epitaxial Growth
  • Field Effect Transistors
  • Ion Implantation
  • Lasers
  • Materials
  • Military Research
  • Operating Systems
  • Optical Properties
  • Phase
  • Semiconductors
  • Substrates

Fields of Study

  • Materials science

Readers

  • Aerospace Engineering
  • Semiconductor Device Technology