Reliability Evaluation and Electrical Characterization of Memories.
Abstract
LSI memories implemented with five different semiconductor technologies were electrically characterized as a function of temperature, voltage and pattern sensitivity. No new technology related characteristics were revealed that would limit the performance characteristics of these memories. The CMOS/SOS memory was the only device to exhibit a pattern sensitivity, but this is not believed to be related to the CMOS/SOS technology. Only the two static memory types (NMOS and CMOS) exhibited the capability for full military temperature range operation, and the 85 C performance of the CMOS/SOS memory was severely degraded (although still useful) at 125 C. Studies of pattern effectiveness suggested that N type patterns could be used for electrical characterization. Except where N-square pattern sensitivities are present, as was the case with the CMOS/SOS RAM, little difference was observed between the N-squared and N functional test results. Pattern related timing variations were also negligible. Although efforts were made to identify N or N-to-the-three-halves-power type patterns that would detect all types of defects, an N-squared pattern sensitivity was detected in the CMOS/SOS RAM. Without specific knowledge of the nature of the CMOS/SOS RAM deficiency, it is apparent that n-squared tests are necessary to detect these types of RAM deficiencies. It is recommended that future electrical characterization studies include provisions for determining the nature of observed device deficiencies.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1979
- Accession Number
- ADA079627
Entities
People
- A. T. Sasaki