Sputter Damage in GaAs Exposed to Low Energy Argon Ions.
Abstract
Substrates of n-type GaAs were exposed to charge neutralized argon ion beams of energy ranging from 50 to 500 eV. Exposure times were 10-30 minutes with a beam density of 1 ma/sq cm. Schottky barrier diodes were formed on the sputtered surfaces using gold films. Capacitance and current measurements showed a marked decrease in barrier height for samples sputtered surfaces using gold films. Capacitance and current measurement showed a marked decrease in barrier height for samples sputtered with energies > 150 eV, though rectification persists to higher beam energies. Chemical etching of the damaged layer to restore the Schottky barrier height showed that the characteristic depth of heavy damage was 20-50 A, increasing with ion beam energy. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1979
- Accession Number
- ADA080119
Entities
People
- H. E. Schmidt
- J. R. Sites
- P. E. Jensen
Organizations
- Colorado State University