Laser Annealing of GaAs.
Abstract
Irradiations of appropriate energy densities from a pulsed ruby laser lambda = 0.69 microns, tp approx. 15 or 59 ns) or a pulsed electron beam (energy approx. 20 keV, t(p) approx. 100 ns) were found to anneal implanted amorphous layers in GaAs successfully without using an encapsulant. This was confirmed by backscattering/channeling and TEM measurements. Good electrical activation of high dose (greater than 10 to the 15th power sq. cm) implanted donor ions, with peak electron concentrations higher than 10 to the 19th power cc), was achieved after both pulsed ruby laser and pulsed electron beam irradiations. Low dose less than 10 to the 13th power sq. cm) donor ion implanted samples irradiated with ruby laser or electron beam pulses did not show any measurable electrical activity. Possible reasons for this apparent inactivity were explored but the exact reasons are not clear at present. Au-Ge/Pt ohmic contacts with specific contact resistance as low as 10 to the -7th power omega/sq.cm were fabricated on n-type GaAs by pulsed electron beam alloying. This value of the specific contact resistance is one of the lowest values reported so far. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1980
- Accession Number
- ADA081466
Entities
People
- C. G. Kirkpatrick
- F. H. Eisen
- J. L. Tandon