Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices

Abstract

The current papers describe the use of a graded insulator to facilitate characterization in charge storage devices, the annealing of radiation induced positive charge, a comprehensive treatment of electron trapping and detrapping in As implanted SiO2, characterization of the electron traps in SiO2 as influenced by processing procedures, and a study of hole trapping in the bulk of ion implanted SiO2.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1980
Accession Number
ADA081518

Entities

People

  • D. J. Di Maria
  • Donald R Young .
  • J. M. Aitken
  • R. F. Dekeersmaecker

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Capacitance
  • Charge Carriers
  • Computer Programs
  • Electric Fields
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Field Effect Transistors
  • Ionizing Radiation
  • Metal Oxide Semiconductors
  • Oxides
  • Oxygen
  • Prosthetics
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene