Electrooptical Devices.
Abstract
The current objectives of the electrooptical device program are (1) to perform life tests on GaInAsP/InP Double-heterostructure (DH) diode lasers operating in the 1.0- to 1.3- micrometer wavelength region and analyze the degradation mechanism; and (2) to fabricate and study avalance photodies of similar composition GaInAsP operating in the same wavelength region. Self-sustained pulsations in light output, similar to those occurring in AlGaAs lasers, were studied in GaInAsP DH lasers. In marked contrast of observations for AlGaAs lasers, the rate of incidence of the pulsations is much lower and their occurrence does not appear to be increased by aging. The pulsations appear to be related to defects originating in the growth process or subsequent fabrication procedures. Substantial increase in avalance gain and reduction of dark current have been achieved in a modified version of the inverted-mesa GaInAsP/InP avalance photodiode structure. Dark currents as low as 1.5 nA at half the breakdown voltage and photocurrent gans as high as 700 have been measured. Implantation of the donors Se, Si, And C and the acceptors Cd, Mg, and Be from room temperature to 200 C were studied. The sample temperature during implantation is to have a pronounced effect on the electrical characteristics of the resulting layers. Electron concentrations in excess of 10 to the 19th power per cc were achieved.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1979
- Accession Number
- ADA084410
Entities
People
- Charles E. Hurwitz
Organizations
- Massachusetts Institute of Technology