Microwave Characterization of the GaAs MESFET and Development of a Low Noise Microwave Amplifier.

Abstract

An adjustable microstrip matching technique has been developed using metallized ceramic squares (METCHIP). A good impedance transformation over a moderate bandwidth using METCHIP matching of a low noise GaAs FET amplifier stage in the 8 to 10 GHz frequency range has been carried out. An empirical model was developed for the METCHIP structure by modifying the transmission line model to account for fringing effects. An analysis of the overall circuit model showed a close correspondence with the actual measured amplifier characteristics.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1979
Accession Number
ADA085358

Entities

People

  • Mark C. Calcatera

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Amplifiers
  • Circuits
  • Electronics Laboratories
  • Equivalent Circuits
  • Field Effect Transistors
  • Frequency
  • Gallium Arsenides
  • Impedance
  • Low Noise
  • Measurement
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Test Fixtures
  • Transistor Amplifiers
  • Transistors

Readers

  • Computational Modeling and Simulation
  • Electronics Engineering

Technology Areas

  • Microelectronics