Reliability Evaluation of GaAs Power FETs.
Abstract
The devices chosen for this study were the TI MSX802 and laboratory devices, Dexcel 3615A-P100F, MSC 88002, and NEC 868196. All are hermetically packaged GaAs power FETs with approximately 0.5 W output power. The study includes device physical, electrical (cw and pulsed), and environmental characterization, electrical (cw and pulsed) and environmental stress tests, and failure analysis. The device physical characterization has been completed and the data are presented. The cw electrical characterization is almost complete, and detailed data are shown for a typical device. No device had significant changes in electrical parameters following operation for 1000 hours at room temperature. The environmental characterization has just begun, and no results are available yet. The results from the cw electrical stress tests, which have been completed, are presented. There are some correlations between the various device structures and the results from different manufacture's devices. The environmental stress tests have begun, and preliminary results are presented. Most of the effort for the remainder of the program will be spent on completing these tests. The pulse characterization and stress tests have not yet begun. The failure analyses are described along with the test causing the failure. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1980
- Accession Number
- ADA086668
Entities
People
- H. M. Macksey
- L. W. Joy
Organizations
- Texas Instruments