Fundamental Limitations of Electron Beam Lithography for Future Military IC Device Fabrication,
Abstract
Future military requirements for real-time information acquisition and tactical electronic warfare (EW) information processing have established a need for very large scale (VLSI) and very high speed (VHSI) integrated circuit microelectronics. Both VLSI and VHSI technologies require a high areal density of integrated circuit (IC) elements thereby dictating a reduction of device size into the submicron and ultra-submicron regions. The requisite miniaturization of military IC devices into the submicron and ultra-submicron region serious questions regarding the use of electron beam lithography (EBL) as an appropriate fabrication technique for this end. In EBL an intermediate energy (5-20 keV) electron beam exposes a radiation sensitive target (such as the polymer PMMA) overlaid on an IC device substrate; a subsequent chemical development treatment removes the exposed region leaving an outline of the pattern sketched by the electron beam (e-beam) when employing a positive-acting resist.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1980
- Accession Number
- ADA090407
Entities
People
- A. T. Ballato
- C. F. Cook Jr.
- G. J. Iafrate
- J. N. Helbert
- W. S. Mcafee
Organizations
- United States Army Communications-Electronics Command