Development of High Performance Sintered Si3N4

Abstract

a gas pressure sintering (GPS) process has been developed to produce Si3N4, containing 0.5-1.0 wt% Be and 2.5-3.7 wt% O, with > 99% relative density. The modulus of rupture of GPS Si3N4 at 1300 degrees was 553 MNm to the minus 2 power (80,200 psi), representing 93% of its room temperature strength. The creep and oxidation resistances were outstanding and evidenced by creep rates of 4.6 x 10 to the minus 7 power and 6.9 x 10 to the minus 6 power N to the minus 1 power at a stress of 69 MNm to the minus 2 power (10,000 psi) at 1300 and 1400 degrees C in air.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1980
Accession Number
ADA091757

Entities

People

  • C. D. Greskovich
  • J. A. Palm

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical
  • Weapons Technologies

DTIC Thesaurus Topics

  • Air Force
  • Body Weight
  • Ceramic Materials
  • Chemical Reactions
  • Chemical Synthesis
  • Chemistry
  • High Temperature
  • Manufacturing
  • Materials
  • Materials Engineering
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Mechanical Properties
  • Mechanics
  • Microscopy
  • Oxidation Resistance

Readers

  • Materials Science and Engineering.
  • Mathematics or Statistics
  • Metallurgy

Technology Areas

  • Space
  • Space - Hall-Effect Thruster