Damage Characterization of Semiconductor Devices for the AN/TRC-145 EMP Study
Abstract
Seventeen types of diodes and 22 types of transistors of the AN/TRC-145 radio terminal set were damage tested, and the damage characteristics of the devices are provided. Damage testing consisted of stepstressing of individual junctions of the devices with voltage square pulses of 0.1- to 10-microsecond widths, both forward and reverse biasing the junctions. The damage characteristics consist of (1) the pulse power for failure or second breakdown as a function of pulse width, and (2) the pulse voltage and device impedance at the failure threshold. The pulse power for failure data are least-square fitted to theoretical relationships between failure power and pulse width. The damage constants of the thermal failure model are then obtained. Comparisons are made between experimental device failure powers and the failure powers predicted by theoretical models. Anomalous responses of low-voltage bipolar transistors are discussed. The introductory sections of the report also contain a condensed review of the state of the practical knowledge of discrete junction device failure from voltage transients.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1980
- Accession Number
- ADA095021
Entities
People
- Bruno M. Kalab
Organizations
- Harry Diamond Laboratories