Growth of HgCdTe by Modified Molecular Beam Epitaxy
Abstract
A novel technique for depositing thin film has been developed. In this technique, a pulsed laser is used as an external power source for evaluation. The laser can also provide in situ beam processing capability when the beam is directed onto the substrate surface. Using this technique, we have demonstrated that Hg(x)Cd(1-x)Te films can be prepared by laser evaporating a HgTe/CdTe mixture. When the deposition takes place in a high vacuum, the film is Hg deficient. However, when it is carried out in a Hg back-pressure as low as . 00002 Torr, the film becomes stoichiometric. Various alloy compositions can be obtained by adjusting the ratio of HgTe and CdTe in the source mixture.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1981
- Accession Number
- ADA102272
Entities
People
- J. T. Cheung