Electrical Characterization of Microprocessor Memories.

Abstract

With the advent of microprocessors, considerable design activity has occurred in the development of semiconductor memories as an integral part of the family with the microprocessors. These memories tend to be organized in byte fashion or some submultiple or multiple of the 8 bits. Selected memories of this type have been evaluated and MIL-M-38510 detail specifications written for those devices deemed appropriate. Evaluation consisted of normal DC and AC parameter limit testing, functional tests and electrical characterization studies. The characterization studies included Schmoo plots of selected parameters that were considered critical, including AC timing requirements. The following types of memories were evaluated: Static RAMS, ROM, Fused PROM, Programmable Array Logic, Field Programmable Logic Arrays, Ultraviolet Erasable PROMS, and Electrically Erasable ROMS. Ten detail specifications were written for the foregoing types of parts as follows: Static RAMS - 1) 2147, 2147H, 2114, 2148; 2)6810; 3) 27S07A, 27S03A; 4) ROM - S6831B; 5) PAL - 10H8, 12H6, 14H4, 16H2; 6) FPLA - 82S100, 93458; 7) UV/EPROM-2716; 8) TMS 2532; 9) 6654; 10) EAROM-2810, 7810. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1981
Accession Number
ADA102305

Entities

People

  • Ted Y. Fujimoto

Organizations

  • Hughes Aircraft Company

Tags

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  • Advanced Electronics
  • Energy and Power Technologies

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  • Access Time
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  • Computers
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  • Engineering
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  • Memory Devices
  • Semiconductor Devices
  • Semiconductors
  • Standards
  • Test And Evaluation
  • Test Methods

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  • Computer Science/Computer Engineering/Data Science/Digital Signal Processing.
  • Software Engineering

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems