GaAs Monolithic Microwave Subsystem Technology Base
Abstract
During this reporting period, the effort was primarily directed toward increasing the power output per unit of gate width and exploiting the previously developed direct selective ion implantation technology to design, fabricate and evaluate successive iterations of multistage monolithic power amplifiers. Improvements in GaAs materials and FET device design and processing have resulted in increases in FET output power per unit of gate width. Values of 0.7 watts per mm have been achieved, (typical values between 0.6 and 0.7 watts per mm). A device power output of 1.6 watts CW has been measured for an eight cell 2400 micron gate width FET. The design of wide-band multistage power amplifiers, that observe area conserving constraints necessary for economical monolithic fabrication, is a formidable task. An analysis and optimization procedure which solves this problem has been developed and demonstrated by the design of a wide-band two-stage monolithic power amplifier that yielded a power output of 28 dBm + or - 0.7 dB over the frequency range from 5.7 to 11.0 GHz. Power outputs of greater than 30 dBm have been achieved over narrower bandwidths.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1980
- Accession Number
- ADA103840
Entities
People
- J. E. Degenford
- J. G. Oakes
- M. C. Driver
- M. Cohn
- R. G. Freitag