Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices
Abstract
These papers discuss electron trapping on sites related to H2O, the subsequent interface states generated by the trapping, and the reduction of these traps by high temperature nitrogen annealing. Radiation induced neutral trapping centers are discussed in relation to electron or hole capital on them. A new electrically alterable memory device using a dual electron injector structure composed of silicon-rich silicon dioxide and silicon dioxide layers is described. Material characterization is the Fi-rich SiO subscript 2 film, discussed using attenuated total reflectance, raman scattering, and optical absorption measurements. Detection of trap impurities, on Fi surfaces is studied using electron trapping character techniques.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1981
- Accession Number
- ADA105030
Entities
People
- D. J. Dimaria
- J. Calise
- John M. Aitken
- K. Demeyer
- Roger F. Dekeersmaecker
Organizations
- IBM Thomas J. Watson Research Center