Practical Study of Silicon Microwave Transistors.

Abstract

Three technologies for the fabrication of SOS MESFET's (SOSFET's) and their integration in microwave subsystems were developed. Work is continuing on the most promising of these technologies. Each technology was found to have a singular advantage in either fabrication simplicity, potential for large drain-gate breakdown voltage (and therefore for high power devices) or maximum operating frequency. All technologies developed are based on standard silicon IC processing techniques, making use of self-alignment and lateral diffusion to reduce demands on photolithography, and allow for easy integration of standard microwave IC lumped elements on insulating substrates. This work was stimulated by a theoretical prediction of good microwave performance by these devices and by the evolving need for large quantities of very low-cost transmit/receive modules operating in the lower microwave frequency range.

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Document Details

Document Type
Technical Report
Publication Date
Oct 31, 1979
Accession Number
ADA105111

Entities

People

  • Jeffrey Frey

Organizations

  • Cornell University College of Engineering

Tags

DTIC Thesaurus Topics

  • Aluminum
  • Circuits
  • Diffusion
  • Diffusion Coefficient
  • Electrical Engineering
  • Electronic Materials
  • Electrons
  • Elements
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Integrated Circuits
  • Materials
  • Metals
  • Microwave Frequency
  • Simulations
  • Transistors

Readers

  • Electronics Engineering
  • Microwave Engineering.
  • Nanofabrication and Microfabrication.

Technology Areas

  • Microelectronics