Properties of High-Efficiency X-Band GaAs Impatt Diodes

Abstract

Several different IMPATT diode structures operating in the precollection mode at X-band (9 to 11 GHz) are examined, both using a complete finite-difference program and a simplified analysis which is developed in the report. The details of the precollection mode are examined, and large-signal solutions are presented for each different structure. Both single- and double- drift diodes are considered. Dynamic temperature effects are included and the differences between simulations at constant temperature and those with variable temperature are noted.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1981
Accession Number
ADA107043

Entities

People

  • George I. Haddad
  • R. K. Mains

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Current Density
  • Electric Fields
  • Equations
  • Frequency
  • Geometry
  • Government Procurement
  • Heat Sinks
  • Impatt Diodes
  • Ionization
  • Materials
  • Plastic Explosives
  • Power Levels
  • Radio Frequency Power
  • Simulations
  • Space Charge
  • Thermal Resistance

Readers

  • Computational Fluid Dynamics (CFD)
  • Electronics Engineering
  • Tribology (the study of the boundary interaction between sliding surfaces, lubrication, wear and friction).